![]() ![]() ![]() Meanwhile, the highest occupied molecular orbital of P3HT than ZnO, can work as the hole traps in the ZnO interlayer, which also contributes to the increased background electron density and improved electron conductivity. The P3HT incorporated in the ZnO interlayer can reuse the wasted energy from the defect-induced charge radiative recombination by Förster resonance energy transfer, which will reduce the charge recombination loss in the device. Herein, the improved performance of a device is demonstrated with an annealing-free ZnO:P3HT composite interlayer by minimizing the charge recombination loss. The strong charge recombination such as defect-induced recombination in some transition metal oxide interlayers is really existent, which has resulted in the severe charge loss and the deteriorated device performance.
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